叶贺庆，河南商水人，1998年9月生，博士。主要柔性印刷电子与器件。硕博期间在Adv. Funct. Mater.、ACS Appl. Mater. Interfaces等国际主流期刊共发表署名SCI论文19 篇。 其中以第一/共同作者在国际主流学术期刊发表SCI论文10 篇，中科院一区TOP期刊论文5 篇，Advance Functional Materials封面两篇。

教育经历：  

2023.09-2023.12：韩国延世大学（QS 排名76），化学工学，博士后。

2018.09-2023.08：韩国岭南大学，化学工学,工学博士。

2014.09-2018.08：韩国岭南大学, 机械工程，工学学士。

研究领域：

柔性印刷电子材料与器件。

获奖经历：  

荣获“2021 年度国家优秀自费留学生”奖项。

代表性作品（2018~2023，第一/共一作者）

1. Heqing Ye, Eunji Park, Su Cheol Shin, G Murali, Daehyun Kim, Jihoon Lee, In Ho Kim, Sung‐Jin Kim, Se Hyun Kim, Yong Jin Jeong, Insik In. Photopatternable High-k Polysilsesquioxane Dielectrics for Organic Integrated Devices: Effects of UV Curing on Chemical and Electrical Properties. ADVANCED FUNCTIONAL MATERIALS. （Back Cover）v2023，2214865. DOI: 10.1002/adfm. 202214865. IF: 19.924.

2. Heqing Ye, Hyeok-jin Kwon, Su Cheol Shin, Hwi-young Lee, Young Ho Park, Xiaowu Tang, Ruxian Wang, Kanghyuck Lee, Jisu Hong, Zhijun Li, Wonkyo Jeong, Jiyeong Kim, Chan Eon Park, Jihoon Lee, Tae Kyu An, Insik In, and Se Hyun Kim. The Hidden Potential of Polysilsesquioxane for High-k: Analysis of the Origin of its Dielectric Nature and Practical Low-Voltage-Operating Applications beyond the Unit Device. (Adv. Funct. Mater. 7/2022) ADVANCED FUNCTIONAL MATERIALS. （Front Cover）2022,2270042. DOI: 10.1002/adfm. 202270042. IF: 19.924.

3. Hyeok-jin Kwon, Heqing Ye, Yonghwa Baek, Jisu Hong, Rixuan Wang, Yonghwan Choi, Ilgeum Lee, Chan Eon Park, Sooji Nam, Juyoung Kim, Se Hyun Kim. Printable Ultra-Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin-Film Transistors and Other Practical Applications. ADVANCED FUNCTIONAL MATERIALS. 2022,2009539. DOI: 10.1002/adfm. 202009539. IF: 19.924.（导师共一）

4. Hyeok-jin Kwon, Heqing Ye, Kyuwon Shim, Henok Getachew Girma, Xiaowu Tang, Bogyu Lim, Yejin Kim, Jihoon Lee, Chan Eon Park, Seo-Hyun Jung, Jong Mok Park, Yu Jin Jung, Do-Hoon Hwang, Hoyoul Kong, Se Hyun Kim. Newly Synthesized Nonvacuum Processed High-k Polymeric Dielectrics with Carboxyl Functionality for Highly Stable Operating Printed Transistor Applications. ADVANCED FUNCTIONAL MATERIALS. 2022,2007304. DOI: 10.1002/adfm. 202007304. IF: 19.924. （导师共一）

5. Heqing Ye, Hyeok-jin Kwon, Xiaowu Tang, Chan EonPark, TaeKyu An, SeHyun Kim. Parylene-based polymeric dielectric top-gate organic field-effect transistors exposed to a UV/ozone environment. Organic Electronics. 87,105942. DOI: 10.1016/j.orgel.2020.105942. IF: 3.70.

6. Heqing Ye, Hyeok-Jin Kwon, Xiaowu Tang, Dong Yun Lee, Sooji Nam, Se Hyun Kim. Direct patterned zinc-tin-oxide for solution-processed thin-film transistors and complementary inverter through electrohydrodynamic jet printing. Nanomaterials. 10 (7),1304. DOI: 10.3390/nano10071304. IF: 5.076.

7. Hyeok-jin Kwon, Heqing Ye, Tae Kyu An, Jisu Hong, Chan Eon Park, Yongseon Choi, Seongjun Shin, Jihoon Lee, Se Hyun Kim, Xinlin Li. Highly stable flexible organic field-effect transistors with Parylene-C gate dielectrics on a flexible substrate. Organic Electronics. 75,105391. DOI: 10.1016/j.orgel.2019.105391. IF: 3.70. （导师共一）

8. Heqing Ye, Ka Yeon Ryu, Hyeok-Jin Kwon, Hyunji Lee, Rixuan Wang,Jisu Hong, Hyun HoChoi, Sang Yong Nam, Jihoon Lee,Hoyoul Kong, Se Hyun Kim. Amorphous FluorinatedAcrylate Polymer Dielectrics for Flexible Transistors and Logic Gates with High OperationalStability. ACS Applied Materials & Interfaces.2023,DOI: 10.1021/acsami.3c02010.IF: 9.5.